Relaxation of quantum dots in a magnetic field at finite bias -- charge, spin and heat currents
نویسندگان
چکیده
We perform a detailed study of the effect of finite bias and magnetic field on the tunneling-induced decay of the state of a quantum dot by applying a recently discovered general duality [PRB 93, 81411 (2016)]. This duality provides deep physical insight into the decay dynamics of electronic open quantum systems with strong Coulomb interaction. It associates the amplitudes of decay eigenmodes of the actual system to the eigenmodes of a so-called dual system with attractive interaction. Thereby, it predicts many surprising features in the transient transport and its dependence on experimental control parameters: the attractive interaction of the dual model shows up as sharp features in the amplitudes of measurable time-dependent currents through the actual repulsive system. In particular, for interacting quantum dots, the time-dependent heat current exhibits a decay mode that dissipates the interaction energy and that is tied to the fermion parity of the system. We show that its decay amplitude has an unexpected gate-voltage dependence that is robust up to sizable bias voltages and then bifurcates, reflecting that the Coulomb blockade is lifted in the dual system. Furthermore, combining our duality relation with the known Iche-duality, we derive new symmetry properties of the decay rates as a function of magnetic field and gate voltage. Finally, we quantify chargeand spin-mode mixing due to the magnetic field using a single mixing parameter.
منابع مشابه
Bistability in the Electric Current through a Quantum-Dot Capacitively Coupled to a Charge-Qubit
We investigate the electronic transport through a single-level quantum-dot which is capacitively coupled to a charge-qubit. By employing the method of nonequilibrium Green's functions, we calculate the electric current through quantum dot at finite bias voltages. The Green's functions and self-energies of the system are calculated perturbatively and self-consistently to the second order of inte...
متن کاملSize-dependent suppression of spin relaxation in electrostatic quantum dots
Triplet-singlet spin relaxation in a vertical electrostatic quantum dot containing two interacting electrons is studied with a realistic model that includes the effects of finite thickness and screening. The spin relaxation mechanism is taken to be spin mixing via the part of the Dresselhaus Hamiltonian that is linear in the lateral momentum. The electron-electron interaction enhances relaxatio...
متن کاملElectron Spin-Phonon Relaxation in Quantum Dots
We calculate the spin relaxation rates in parabolic quantum dots due to the phonon modulation of the spin-orbit interaction in presence of an external magnetic field. Both, deformation potential (DP) and piezoelectric (PE) electron-phonon couplings are included in the Pavlov-Firsov spin-phonon Hamiltonian. We demonstrate that the spin relaxation rates are particularly sensitive with the Landé g...
متن کاملCoherent probing of excited quantum dot states in an interferometer.
Measurements of elastic and inelastic cotunneling currents are presented on a two-terminal Aharonov-Bohm interferometer with a Coulomb-blockaded quantum dot embedded in each arm. Coherent current contributions, even in a magnetic field, are found in the nonlinear regime of inelastic cotunneling at a finite-bias voltage. The phase of the Aharonov-Bohm oscillations in the current exhibits phase j...
متن کاملElectron spin relaxation by nuclei in semiconductor quantum dots
We have studied theoretically the electron spin relaxation in semiconductor quantum dots via interaction with nuclear spins. The relaxation is shown to be determined by three processes: (i) – the precession of the electron spin in the hyperfine field of the frozen fluctuation of the nuclear spins; (ii) – the precession of the nuclear spins in the hyperfine field of the electron; and (iii) – the...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2016